Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3106633
Keywords
Auger effect; carrier relaxation time; electroabsorption; electro-optical devices; excited states; gallium arsenide; ground states; III-V semiconductors; indium compounds; nonlinear optics; optical materials; optical waveguides; phonons; semiconductor quantum dots
Categories
Ask authors/readers for more resources
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
