Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3078409
Keywords
boron; electroluminescence; electron-hole recombination; elemental semiconductors; oxidation; semiconductor heterojunctions; semiconductor thin films; silicon; sputter deposition; titanium compounds; transmission electron microscopy; vacancies (crystal); valence bands
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Funding
- 973 Program [2007CB613403]
- Research Fund for Doctoral Program of Higher Education of China [007033501]
- PCSIRT [0651]
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Titanium films sputtered on heavily boron-doped (p(+)) silicon substrates were thermally oxidized to form electroluminescent TiO2/p(+)-Si heterostructures. The electroluminescence (EL) features a broad spectrum covering red, green, and blue regions. We believe that in TiO2 recombinations between electrons at oxygen-vacancy-related energy levels and holes in the valence band result in the EL. Furthermore, the EL mechanism has been explained in terms of the energy band diagram of the TiO2/p(+)-Si heterostructure, which possesses an intermediate ultrathin SiOx layer revealed by high resolution transmission microscopy.
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