Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 6, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3080203
Keywords
carrier lifetime; II-VI semiconductors; nanostructured materials; polymers; semiconductor-insulator boundaries; solar cells; wide band gap semiconductors; zinc compounds
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Funding
- National Science Council, Taiwan [NSC 96-2112-M-002-030-MY3]
- U.S. Airforce [AOARD 074-014]
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We have demonstrated an improvement of photovoltaic performance based on the nanostructured ZnO/poly(3-hexylthiophene) (P3HT) hybrid through interface molecular modification on ZnO nanorod surface. By probing the carrier dynamics at ZnO/P3HT interfaces, we have found that the interfacial molecules can play the role of assisting charge separation and suppression of back recombination at interfaces, which accounts for the observed enhanced short circuit current (J(sc)) and open circuit voltage (V-oc) in photovoltaic performance.
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