4.6 Article

Effects of film thickness on manganite film-based heterjunctions

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 8, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3089698

Keywords

calcium compounds; lanthanum compounds; lattice constants; metal-insulator boundaries; niobium; ohmic contacts; pulsed laser deposition; strontium compounds; thermionic electron emission; thin films; tunnelling

Funding

  1. National Natural Science Foundation of China
  2. National Fundamental Research of China
  3. Chinese Academy of Sciences

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Effects of film thickness on interfacial barrier have been studied for the La0.67Ca0.33MnO3/SrTiO3:Nb and La0.67Sr0.33MnO3/SrTiO3:Nb junctions. In addition to the evolution of the transport behavior from electron tunneling to thermionic emission, increase in film thickness from similar to 5 to similar to 50 nm causes a significant growth of interfacial barrier as revealed by photoresponse experiments, and the maximum change in interfacial barrier is similar to 13% for La0.67Ca0.33MnO3/SrTiO3:Nb and similar to 45% for La0.67Sr0.33MnO3/SrTiO3:Nb. A linear relation between interfacial barrier and lattice constant of the films is further found, which suggests the influence of lattice strains on interfacial barrier. Qualitative explanations are given.

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