Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3083559
Keywords
annealing; cobalt alloys; electronic density of states; germanium alloys; iron alloys; magnesium compounds; magnetic multilayers; magnetisation; manganese alloys; metal-insulator boundaries; tunnelling magnetoresistance
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Funding
- MEXT, Japan [19048001]
- [20246054]
- Grants-in-Aid for Scientific Research [19048001] Funding Source: KAKEN
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We found that the tunnel magnetoresistance ratio of fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic tunnel junctions (MTJs) increased discontinuously and significantly from 92% at room temperature (RT) (244% at 4.2 K) for T-a of 475 degrees C to 160% at RT (376% at 4.2 K) for T-a of 500 degrees C, where T-a is the temperature at which the MTJ trilayer was in situ annealed right after deposition of the upper electrode. We also found that the dI/dV versus V characteristics for the parallel and antiparallel magnetization configurations changed discontinuously and markedly with increasing T-a from 475 degrees C or less to 500 degrees C or higher. These significant changes are discussed in terms of a possible change in the spin-dependent interfacial density of states.
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