4.6 Article

Impurity control in Co-doped ZnO films through modifying cooling atmosphere

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 2, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3068753

Keywords

cobalt; ferromagnetic materials; II-VI semiconductors; impurity states; magnetic impurities; magnetic semiconductors; magnetic thin films; nanostructured materials; semiconductor doping; semiconductor thin films; wide band gap semiconductors; zinc compounds

Funding

  1. EU Marie Curie Excellence [EXT-014156]

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In order to understand the role of impurities in Co-doped ZnO, while at the same time minimizing the possibility of Co nanocluster formation, Zn1-xCoxO films were grown under relatively oxidizing conditions and then cooled under either N-2 or air. Up to the highest doping level x=0.04, after cooling in N-2 no measurable second phases were found whereas after cooling in air, ZnCo2O4 (nonferromagnetic at room temperature) appeared even for the lowest doping level x=0.0015. In addition, stronger ferromagnetism was observed in the N-2 cooled samples, indicating an intrinsic origin to the ferromagnetism in Zn1-xCoxO.

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