Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3158951
Keywords
capacitors; MIM devices; strontium compounds; zirconium compounds
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Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance (alpha). A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high-k materials with opposite alpha, it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3/ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of -60 ppm/V-2 associated with a density of 11.5 fF/mu m(2). These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors.
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