Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3072366
Keywords
gallium compounds; III-V semiconductors; indium compounds; lattice constants; photoluminescence; scanning tunnelling microscopy; self-assembly; semiconductor quantum dots
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Funding
- DeNUF, EU FP6 [011760]
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We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) experiments. X-STM measurements on 13 individual quantum dots reveal an ellipsoidal dot shape with an average height of 8 nm and a diameter of 26 nm. Analysis of the outward relaxation and lattice constant profiles shows that the dots consist of an InGaAs alloy with a profound gradient in the indium concentration in both horizontal and vertical directions. These results are important to obtain a deeper understanding of the relationship between the structural and electronic properties of semiconductor quantum dots.
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