Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3275753
Keywords
antiferromagnetic materials; boron alloys; cobalt alloys; current density; ferromagnetic materials; iron alloys; magnesium compounds; magnetic anisotropy; magnetic multilayers; magnetic tunnelling; magnetisation; magnetocaloric effects; ruthenium alloys; thermal stability
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Funding
- New Energy and Industrial Technology Development Organization (NEDO)
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We prepared MgO-based magnetic tunnel junctions having a CoFeB/Ru/CoFeB synthetic free layer in which magnetizations of the CoFeB layers were ferromagnetically coupled (F-coupled Sy) or antiferromagnetically coupled (AF-coupled Sy). We studied spin-transfer switchings to evaluate their thermal stability (Delta(0)=KV/k(B)T) and intrinsic switching current density (J(C0)). Although the free layers of two types showed nearly equal J(C0), the Delta(0) of F-coupled Sy was observed to be twice that of AF-coupled Sy. This difference is attributable to the shape magnetic anisotropy of the free-layer cells. Results show that F-coupled Sy is superior to AF-coupled Sy for memory applications.
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