Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2837539
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Funding
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0824209] Funding Source: National Science Foundation
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Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene. (c) 2008 American Institute of Physics.
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