Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2953176
Keywords
-
Categories
Ask authors/readers for more resources
We investigate the electronic properties of GaAs(1-x)Bi(x) by photoluminescence at variable temperature (T=10-430 K) and high magnetic field (B=0-30 T). In GaAs(0.981)Bi(0.019), localized state contribution to PL is dominant up to 150 K. At T=180 K the diamagnetic shift of the free-exciton states reveals a sizable increase in the carrier effective mass with respect to GaAs. Such an increase cannot be accounted for by an enhanced localized character of the valence band states, solely. Instead, it suggests that also the Bloch states of the conduction band are heavily affected by the presence of bismuth atoms. (C) 2008 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available