Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3012579
Keywords
antimony; current density; excitons; gallium; II-VI semiconductors; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum wells; zinc compounds
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Funding
- DMEA through the Center for NanoScience and Innovation for Defense (CNID) [H94003-07-2-0703]
- ARO-YIP award
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Electrically pumped ZnO quantum well diode lasers are reported. Sb-doped p-type ZnO/Ga-doped n-type ZnO with an MgZnO/ZnO/MgZnO quantum well embedded in the junction was grown on Si by molecular beam epitaxy. The diodes emit lasing at room temperature with a very low threshold injection current density of 10 A/cm(2). The lasing mechanism is exciton-related recombination and the feedback is provided by close-loop scattering from closely packed nanocolumnar ZnO grains formed on Si.
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