Ordered n-type ZnO nanorod arrays

Using indium as catalyst for growth and simultaneously as doping source, ordered arrays of n-type ZnO single crystal nanorods have been perpendicularly grown on p-GaN/Al2O3 substrates with a vapor phase transport growth method. The low temperature photoluminescence measurements of the n-ZnO nanorods show dominant In-related neutral donor bound exciton emission in the ultraviolet region. Electrical transport measurements performed on single n-ZnO nanorods yield resistances of about 50-200 k Omega and a typical specific resistivity of 2.0x10(-2) Omega cm. The resistivity is one order of magnitude reduced by introducing In compared to the nominally undoped ZnO nanorods. (C) 2008 American Institute of Physics.