p-channel thin-film transistor using p-type oxide semiconductor, SnO

This paper reports that among known p-type oxide semiconductors, tin monoxide (SnO) has a high hole mobility and produces good p-type oxide thin-film transistors (TFTs). Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at 575 degrees C by pulsed laser deposition. These exhibited a Hall mobility of 2.4 cm(2) V-1 s(-1) at room temperature. Top-gated TFTs, using epitaxial SnO channels, exhibited field-effect mobilities of 1.3 cm(2) V-1 s(-1), on/off current ratios of similar to 10(2), and threshold voltages of 4.8 V.