Related references
Note: Only part of the references are listed.Characteristics of long wavelength InGaN quantum well laser diodes
K. S. Kim et al.
APPLIED PHYSICS LETTERS (2008)
Optical gain spectra for near UV to aquamarine (Al,In) GaN laser diodes
K. Kojima et al.
OPTICS EXPRESS (2007)
Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range
C. Hums et al.
APPLIED PHYSICS LETTERS (2007)
Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state
K. Lorenz et al.
PHYSICAL REVIEW LETTERS (2006)
Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
JF Carlin et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2005)
InN, latest development and a review of the band-gap controversy
KSA Butcher et al.
SUPERLATTICES AND MICROSTRUCTURES (2005)
Growth and characterization of InN on sapphire substrate by RF-MBE
HL Xiao et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Growth and characterization of AlInN on AlN template
T Fujimori et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Characterisation of quaternary AlInGaN thick layers and quantum wells grown by MOVPE
V Perez-Solorzano et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
JM Bethoux et al.
JOURNAL OF APPLIED PHYSICS (2003)
High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
JF Carlin et al.
APPLIED PHYSICS LETTERS (2003)
Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaN
I Stanley et al.
JOURNAL OF CRYSTAL GROWTH (2003)
Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy
HPD Schenk et al.
JOURNAL OF CRYSTAL GROWTH (2003)