Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2971027
Keywords
-
Categories
Funding
- ERA-SPOT-003
- PARSEM [MRTN-CT-2004-005583)]
Ask authors/readers for more resources
Al1-xInxN ternary alloys with solid phase indium compositions between x=0.15 and 0.28 have been grown by metal organic chemical vapor deposition under indium rich conditions within the growth temperature range of 750-810 degrees C. A thermally activated process with activation energy of 1.05 +/- 0.05 eV is found to compete with indium incorporation. Smooth epitaxial layers with root mean-squares surface roughness of 0.3-0.8 nm are obtained. (Al,In)N films lattice matched to GaN have been introduced into laser diode structures for optical confinement. Optical gain is observed. (C) 2008 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available