Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2957472
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- Engineering and Physical Sciences Research Council [GR/S96913/01] Funding Source: researchfish
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Polymer light-emitting field-effect transistors (LEFETs) require high and balanced electron and hole mobilities to achieve high current densities. Here we demonstrate a novel gate dielectric for polymer LEFETs that enables mobilities of 0.01 cm(2)/V s for both electrons and holes. The low-k dielectric polycyclohexylethylene is placed in direct contact with the poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) semiconductor. A second dielectric layer comprising the high-k material poly(vinylidene fluoride-trifluoroethylene) is used to apply a high electric field onto the low-k dielectric layer. The attainable electron-hole recombination current in such optimized polymer LEFETs is measured and the implications for achieving electrically pumped lasing in a LEFET are discussed. (C) 2008 American Institute of Physics.
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