4.6 Article

GaAs/AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy

Journal

APPLIED PHYSICS LETTERS
Volume 93, Issue 20, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3026174

Keywords

aluminium compounds; gallium arsenide; gallium compounds; liquid phase epitaxial growth; photoluminescence; quantum dot lasers; stimulated emission

Funding

  1. JSPS KAKENHI [20760207]
  2. Iketani Science and Technology Foundation
  3. Grants-in-Aid for Scientific Research [20760207] Funding Source: KAKEN

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We have demonstrated photopumped laser action of self-assembled GaAs/AlGaAs quantum dots (QDs) grown on GaAs (311)A substrate by droplet epitaxy. Due to the short migration distance of Ga adatoms across the (311)A surface, high-density QDs were created with high uniformity. The QDs exhibited a narrow spectral band of intense photoluminescence from the QD ensemble, reflecting their small size distribution and high quality. Using the QDs on the (311)A surface as an active laser medium, we observed multimodal stimulated emissions at temperatures of up to 300 K.

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