Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2987516
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- MEXT
- Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
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A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a crystalline MgO tunnel barrier. This TMR ratio is the largest reported to date in MTJs using a Heusler alloy electrode. Moreover, we have observed a large TMR ratio of 217% at room temperature (RT). This TMR at RT is much larger than that of MTJs using an amorphous Al-oxide tunnel barrier. However, the temperature dependence of the TMR ratio is still large because of inelastic tunneling in the antiparallel magnetic configuration. (C) 2008 American Institute of Physics.
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