4.6 Article

Room temperature ferromagnetism in ZnO films due to defects

Journal

APPLIED PHYSICS LETTERS
Volume 92, Issue 8, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2885730

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ZnO films were prepared by pulsed laser deposition on a-plane sapphire substrates under N-2 atmosphere. Ferromagnetic loops were obtained with the superconducting quantum interference device at room temperature, which indicate a Curie temperature much above room temperature. No clear ferromagnetism was observed in intentionally Cu-doped ZnO films. This excludes that Cu doping into ZnO plays a key role in tuning the ferromagnetism in ZnO. 8.8% negative magnetoresistance probed at 5 K at 60 kOe on ferromagnetic ZnO proves the lack of s-d exchange interaction. Anomalous Hall effect (AHE) was observed in ferromagnetic ZnO as well as in nonferromagnetic Cu-doped ZnO films, indicating that AHE does not uniquely prove ferromagnetism. The observed ferromagnetism in ZnO is attributed to intrinsic defects. (c) 2008 American Institute of Physics.

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