Related references
Note: Only part of the references are listed.Sub-1100-μA reset current of nickel oxide resistive memory through control of filamentary conductance by current limit of MOSFET
Yoshihiro Sato et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Improvement of resistive memory switching in NiO using IrO2
D. C. Kim et al.
APPLIED PHYSICS LETTERS (2006)
Identification of a determining parameter for resistive switching of TiO2 thin films -: art. no. 262907
C Rohde et al.
APPLIED PHYSICS LETTERS (2005)
Reproducible resistance switching in polycrystalline NiO films
S Seo et al.
APPLIED PHYSICS LETTERS (2004)