p-type field-effect transistor of NiO with electric double-layer gating

Electric double-layer transistors have recently attracted a growing interest because of their low operating voltage and capacity for accumulation of high carrier density. Here, we demonstrate an electric double-layer transistor with a NiO single-crystal Mott insulator that displays a p-type behavior with a field-effect mobility and on/off ratio of 1.6x10(-4) cm(2)/V s and 130, respectively. Despite relatively poor device performance, the present results demonstrate that the electric double-layer transistor is not limited to normal band insulators but is achievable using Mott insulators, in which electrostatic doping is of significant interest. (C) 2008 American Institute of Physics.