Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3049607
Keywords
electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; quantum well devices; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors
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Funding
- Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [R17-2007-078-01000-0]
- Ministry of Commerce, Industry and Energy [2005-E-FM11-P-12-3-020-2007]
- BK 21 program in Korea
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We report the white color electroluminescence (EL) emission from InGaN/GaN multiple quantum wells (MQWs) grown on GaN microfacets. The white color was realized by combining EL emission from InGaN/GaN MQWs on c-plane (0001), semipolar {11-22}, and {1-101} microfacets of trapezoidal n-GaN arrays. The color of EL emission was changed from reddish to bluish color with injection current and showed a white color in the current range of 180-230 mA. The variation in the color of EL emission was attributed to differences in current injection and quantum efficiency of MQWs grown on c-plane (0001) and semipolar GaN microfacets.
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