Secondary-ion mass spectrometry of photosensitive heterophase semiconductor

The influence of positively charged ion bombardment and white light illumination on polycrystalline high-resistance photosensitive CdS-PbS semiconductor was investigated by secondary-ion mass spectrometry method. The illumination during ion sputtering was found to result in an ion yield decrease of some film components (Cd or PbO) and in increase of another one (Pb). The experimental data are explained by the model of a heterophase semiconductor resistant to degradation. (C) 2004 Elsevier B.V. All rights reserved.