Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3043682
Keywords
carbon nanotubes; photolithography; thin film transistors
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Funding
- AFOSR [FA9550-08-1-0070]
- NSF [IIP-0712095]
- NASA [NNX08CB39P]
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We report a flexible carbon nanotube (CNT) thin-film transistor (TFT) fabricated solely by ink-jet printing technology. The TFT is top gate configured, consisting of source and drain electrodes, a carrier transport layer based on an ultrapure, high-density (>1000 CNTs/mu m(2)) CNT thin film, an ion-gel gate dielectric layer, and a poly(3,4-ethylenedioxythiophene) top gate electrode. All the TFT elements are ink-jet printed at room temperature on a polyimide substrate without involving any photolithography patterning or surface pretreatment steps. This CNT-TFT exhibits a high operating frequency of over 5 GHz and an on-off ratio of over 100. Such an all-ink-jet-printed process eliminates the need for lithography, vacuum processing, and metallization procedures and thus provides a promising technology for low-cost, high-throughput fabrication of large-area high-speed flexible electronic circuits on virtually any desired flexible substrate.
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