Contribution of n-type amorphous carbon on the fabrication of n-C:P/p-Si solar cells

The phosphorus doped n-type (n-C:P) carbon films and fabrication of n-C:P/p-Si heterojunction solid-state solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target have been studied. The P atoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.22-1.77 atomic percentages. The cells performances have been given in the dark I-V rectifying curve and I-V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm(2), 25 degrees C). The open circuit voltage (V-oc) and short circuit current density (J(sc)) for the cells are observed to vary from 215 to 265 mV and from 7.5 to 10.5 mA/cm, respectively. The cell fabricated using the target with the amount of P by 7 weight percentages (Pwt%) shows the highest energy conversion efficiency, eta = 1.14% and fill factor, FF = 41%. In this paper, the dependence of P content on the electrical and optical properties of the deposited n-C:P films and the photovoltaic characteristic of the n-C:P/p-Si cells are reported.