Related references
Note: Only part of the references are listed.Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN
Melvin B. McLaurin et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Pure blue laser diodes based on nonpolar m-plane gallium nitride with InGaN waveguiding layers
Kuniyoshi Okamoto et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Microscopic origins of surface states on nitride surfaces
Chris G. Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2007)
Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy
G. Koblmuller et al.
JOURNAL OF APPLIED PHYSICS (2007)
Defect-mediated surface morphology of nonpolar m-plane GaN
A. Hirai et al.
APPLIED PHYSICS LETTERS (2007)
High power and high external efficiency m-plane InGaN light emitting diodes
Mathew C. Schmidt et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Buried p-type layers in mg-doped InN
P. A. Anderson et al.
APPLIED PHYSICS LETTERS (2006)
Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces
D. Segev et al.
EUROPHYSICS LETTERS (2006)
Characterisation of multiple carrier transport in indium nitride, grown by molecular beam epitaxy
Tamara B. Fehlberg et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
M. McLaurin et al.
JOURNAL OF APPLIED PHYSICS (2006)
In-polar InN grown by plasma-assisted molecular beam epitaxy
Chad S. Gallinat et al.
APPLIED PHYSICS LETTERS (2006)
A-plane (1120) InN growth on nitridated R-plane (1012) sapphire by ECR-MBE
Y. Kumagai et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2006)
Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy
XQ Wang et al.
JOURNAL OF APPLIED PHYSICS (2006)
Mie resonances, infrared emission, and the band gap of InN
TV Shubina et al.
PHYSICAL REVIEW LETTERS (2004)
Intrinsic electron accumulation at clean InN surfaces
I Mahboob et al.
PHYSICAL REVIEW LETTERS (2004)
Effective mass of InN epilayers
SP Fu et al.
APPLIED PHYSICS LETTERS (2004)
Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
A Chakraborty et al.
APPLIED PHYSICS LETTERS (2004)
Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
YG Cao et al.
PHYSICAL REVIEW B (2003)
Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
H Lu et al.
APPLIED PHYSICS LETTERS (2003)
Effects of film polarities on InN growth by molecular-beam epitaxy
K Xu et al.
APPLIED PHYSICS LETTERS (2003)
Band gaps of InN and group III nitride alloys
J Wu et al.
SUPERLATTICES AND MICROSTRUCTURES (2003)
Growth of M-plane GaN films on γ-LiAlO2(100) with high phase purity
YJ Sun et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
Surface charge accumulation of InN films grown by molecular-beam epitaxy
H Lu et al.
APPLIED PHYSICS LETTERS (2003)
Unusual properties of the fundamental band gap of InN
J Wu et al.
APPLIED PHYSICS LETTERS (2002)
Share Paper
