4.6 Article

High figures of merit and natural nanostructures in Mg2Si0.4Sn0.6 based thermoelectric materials

Journal

APPLIED PHYSICS LETTERS
Volume 93, Issue 10, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2981516

Keywords

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Funding

  1. National Basic Research Program of China [2007CB607502]
  2. National 863 Program [2007AA03Z234]
  3. National Natural Science Foundation of China [50731006 and 50522203]
  4. DOE/EPSCoR [DE-FG02-04ER-46139]
  5. SC EPSCoR Office/Clemson University

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Mg-2(Si, Sn) compounds have shown great promise for thermoelectric applications due to good thermoelectric properties, nontoxicity, and abundantly available constituent elements. Herein we report on the thermoelectric properties and microstructure of high performance Mg2Si0.4-xSn0.6Sbx (0 <= x <= 0.015) alloys. The state-of-the-art ZT value of similar to 1.1 has been attained in the samples with x=0.0075 due to the relatively low thermal conductivity. In light of the simple cubic structure and mostly light constituent elements, the reduction in lattice thermal conductivity has been discussed in connection with a fairly large amount of in situ formed nanostructures in these samples. (C) 2008 American Institute of Physics.

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