Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm(2)/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO active layer to reduce the series resistance. After Ar plasma treatment, the surface of the source/drain region was divided into In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of 1 k Omega/square for a film thickness of over 40 nm. The interface between the source/drain Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact resistivity of 50 mu Omega cm(2). (C) 2008 American Institute of Physics.