Related references
Note: Only part of the references are listed.Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range
E. A. Berkman et al.
APPLIED PHYSICS LETTERS (2008)
Simulation of In0.65Ga0.35N single-junction solar cell
Xiaobin Zhang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
Design and characterization of GaN/InGaN solar cells
Omkar Jani et al.
APPLIED PHYSICS LETTERS (2007)
Efficiency enhancement in Si solar cells by textured photonic crystal back reflector
L. Zeng et al.
APPLIED PHYSICS LETTERS (2006)
Superior radiation resistance of In1-xGaxN alloys:: Full-solar-spectrum photovoltaic material system
J Wu et al.
JOURNAL OF APPLIED PHYSICS (2003)
Optical bandgap energy of wurtzite InN
T Matsuoka et al.
APPLIED PHYSICS LETTERS (2002)
Small band gap bowing in In1-xGaxN alloys
J Wu et al.
APPLIED PHYSICS LETTERS (2002)
Unusual properties of the fundamental band gap of InN
J Wu et al.
APPLIED PHYSICS LETTERS (2002)
Band offsets and properties of AlGaAs/GaAs and AlGaN/GaN material systems
AJ Ekpunobi et al.
SUPERLATTICES AND MICROSTRUCTURES (2002)