(In,Sn)2O3/TiO2/Pt Schottky-type diode switch for the TiO2 resistive switching memory array

A Schottky-type diode switch consisting of a Pt/(In,Sn)(2)O-3/TiO2/Pt stack was fabricated for applications to cross-bar type resistive-switching memory arrays. The high (0.55 eV) and low potential barrier at the TiO2/Pt and TiO2/(In,Sn)(2)O-3 junctions, respectively, constitute the rectifying properties of the stacked structure. The forward/reverse current ratio was as high as similar to 1.6x10(4) at an applied voltage of similar to 1 V. When Pt/TiO2/Pt memory was connected to this diode in series, there was an insignificant interference on the memory function from the diode under the forward bias and virtually no resistive switching under a reverse bias. (c) 2008 American Institute of Physcix.