Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3046099
Keywords
gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; polarisation; semiconductor quantum wells; surface plasmons; wide band gap semiconductors
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Funding
- National Science Council
- Republic of China [NSC 96-2120-M-002-008, NSC 96-2628-E-002-044-MY3]
- National Taiwan University [97R0061-04]
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The enhanced and partially polarized output of a green light-emitting diode (LED), in which its InGaN/GaN quantum well (QW) couples with surface plasmons (SPs) on a surface Ag grating structure, is demonstrated. Compared with a LED sample without (flat) Ag coating, the total output intensity of an LED of SP-QW coupling can be enhanced by similar to 59% (similar to 200)% when the grating period and groove depth are 500 and 30 nm, respectively. Also, a bottom-emission polarization ratio of 1.7 can be obtained under the condition of 15 nm in groove depth.
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