Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3005639
Keywords
contact resistance; diamond; doping; phosphorus; plasma CVD; tunnelling
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Funding
- New Energy and Industrial Technology Development Organization (NEDO) of Japan
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Low resistive contacts were formed on heavily phosphorus-doped diamond (n(+)) films with phosphorus concentration of over similar to 10(20) cm(-3) grown on (111) diamond substrates by microwave plasma enhanced chemical vapor deposition with precise control of growth conditions. The specific contact resistance was determined by characterizing the current-voltage relations by means of transfer length method. It was found that the resistance of Ti/n(+) contact was significantly reduced down to the order of similar to 10(-3) Omega cm(2) even at room temperature, which indicates that the barrier width would be narrow for tunneling through the barrier to take place by heavy phosphorus doping.
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