Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3046780
Keywords
copper compounds; energy gap; gallium compounds; indium compounds; semiconductor thin films; solar cells; surface composition; ternary semiconductors; thin film devices
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Funding
- National Renewable Energy Laboratory [XXL-544205-12, ADJ-1-30630-12]
- DFG Emmy-Noether-Programm
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The surface composition of Cu(In,Ga)(S,Se)(2) (CIGSSe) thin films intrinsically deviates from the corresponding bulk composition, which also modifies the electronic structure and thus the optical properties. We used a combination of photon and electron spectroscopies with different information depths to gain depth-resolved information on the band gap energy (E-g) in CIG(S)Se thin films. We find an increasing E-g with decreasing information depth, indicating the formation of a surface region with significantly higher E-g. This E-g-widened surface region extends further into the bulk of the sulfur-free CIGSe thin film compared to the CIGSSe thin film.
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