4.6 Article

Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires

Related references

Note: Only part of the references are listed.
Article Nanoscience & Nanotechnology

Micro-photoluminescence spectroscopy study of high-quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy

Yasunori Kobayashi et al.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2008)

Article Materials Science, Multidisciplinary

Radiative recombination of excitons in disk-shaped InAs/InP quantum dots

Shinichi Tomimoto et al.

PHYSICAL REVIEW B (2007)

Article Physics, Condensed Matter

Quantum-confinement effects in InAs-InP core-shell nanowires

Z. Zanolli et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2007)

Article Nanoscience & Nanotechnology

Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Magnus W. Larsson et al.

NANOTECHNOLOGY (2007)

Article Materials Science, Multidisciplinary

Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies

T. T. Chen et al.

PHYSICAL REVIEW B (2007)

Article Physics, Condensed Matter

Dependence of the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots on the quantum dot size

C. Kristukat et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2007)

Article Nanoscience & Nanotechnology

Crystal-structure-dependent photoluminescence from InP nanowires

M Mattila et al.

NANOTECHNOLOGY (2006)

Article Physics, Applied

Optical studies of strained type II GaAs0.7Sb0.3/GaAs multiple quantum wells

TT Chen et al.

JOURNAL OF APPLIED PHYSICS (2003)

Article Physics, Condensed Matter

Optical properties of InAs/InP ultrathin quantum wells

V Albe et al.

PHYSICA B (2001)