High energy density metal-insulator-metal capacitors with Ba[(Ni1/2,W1/2)0.1Ti0.9]O3 thin films

Metal-insulator-metal capacitors with high-k Ba[(Ni-1/2,W-1/2)(0.1)Ti-0.9]O-3 thin film dielectrics were fabricated by chemical solution deposition technique. High dielectric constant (85), low dielectric loss (0.007), and high breakdown field (similar to 3.0 MV/cm) at room temperature were achieved. The temperature and frequency dependences of capacitance and loss tangent were small around room temperature (300 +/- 25 K). At room temperature, high capacitance density (3.1 fF/mu m(2)) along with high energy density (34 J/cm(3)) and low leakage current (7.7x10(-6) A/cm(2) at 20 V) were obtained, indicating high potential for this material in the integrated circuits and power electronic applications. (c) 2008 American Institute of Physics.