Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2949080
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We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface. (c) 2008 American Institute of Physics.
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