4.6 Article

Measuring dopant concentrations in compensated p-type crystalline silicon via iron-acceptor pairing

Related references

Note: Only part of the references are listed.
Article Energy & Fuels

Distributions of metal impurities in multicrystalline silicon materials

T. Buonassisi et al.

PROGRESS IN PHOTOVOLTAICS (2006)

Article Physics, Applied

Formation rates of iron-acceptor pairs in crystalline silicon

D Macdonald et al.

JOURNAL OF APPLIED PHYSICS (2005)

Article Engineering, Electrical & Electronic

Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility

S Reggiani et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2002)

Review Materials Science, Multidisciplinary

Iron contamination in silicon technology

AA Istratov et al.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2000)