Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2949746
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The current instability of pentacene thin film transistors is described by the energetic distribution of the barrier height for the trapping of mobile charges at the organic/insulator interface. The trapping energy was quantitatively analyzed by measuring the temperature dependence of current decay, which follows a stretched exponential function. The distribution of the barrier becomes higher and narrower by the use of a self assembled monolayer (SAM) on the insulator surface, whereas the pentacene film morphology has little influence on the trapping barriers. The increase in the barrier height in the SAM-treated device suppresses charge trapping, resulting in stable device operation. (C) 2008 American Institute of Physics.
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