Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3056659
Keywords
conduction bands; electric breakdown; percolation; scanning electron microscopy; silicon compounds; transmission electron microscopy; vacancies (crystal)
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Funding
- Ministry of Education (MOE) [T206B1205]
- NTU [RGM 12/07]
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Our results show that the defect distribution within a nanometer size percolation path is nonuniform. The defects, which are shown as oxygen vacancies, spread out radially from the center of the percolation path. The conduction band edges of the defective oxide are lowered for 0.14-0.78 eV when the Si-O composition changes from SiO1.76 to SiO0.7.
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