Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3046116
Keywords
conduction bands; III-V semiconductors; indium compounds; interface states; semiconductor heterojunctions; silicon compounds; valence bands; wide band gap semiconductors; X-ray photoelectron spectra
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Funding
- 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
- Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]
- National Science Foundation of China [60506002, 60776015]
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The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55 +/- 0.23 eV and the conduction band offset is deduced to be -2.01 +/- 0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.
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