Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3009206
Keywords
annealing; domain boundaries; epitaxial layers; gadolinium compounds; leakage currents; molecular beam epitaxial growth; permittivity; silicon; tunnelling
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Funding
- German Federal Ministry of Education and Research (BMBF)
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We report on the effect of domain boundaries on the electrical properties of epitaxial Gd2O3 thin films grown on Si(001) substrates with 4 degrees miscut along [110] azimuth. Dedicated preparation of the substrate surfaces can lead to two different microstructures of epitaxial Gd2O3 layers when grown at identical growth conditions. A substrate surface with terraces of biatomic steps height is the key point to achieve single crystalline epitaxial Gd2O3 layer. Such epi-Gd2O3 layers exhibited significantly lower leakage currents compared with the commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, this difference disappears, indicating that for ultrathin layers direct tunneling becomes dominating. Additionally, forming gas annealing can reduce the leakage current by a few orders of magnitude. Here, thinner layers of both structural types exhibited similar electrical properties.
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