Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3023068
Keywords
buffer layers; chemical vapour deposition; dislocation density; Ge-Si alloys; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; surface roughness
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Funding
- EPSRC [EP/D034485/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/D034485/1] Funding Source: researchfish
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An innovative approach is proposed for epitaxial growth of high Ge content, relaxed Si(1-x)Ge(x) buffer layers on a Si(001) substrate. The advantages of the technique are demonstrated by growing such structures via chemical vapor deposition and their characterization. Relaxed Ge is first grown on the substrate followed by the reverse grading approach to reach a final buffer composition of 0.78. The optimized buffer structure is only 2.8 mu m thick and demonstrates a low surface threading dislocation density of 4x10(6) cm(-2), with a surface roughness of 2.6 nm. The buffers demonstrate a relaxation of up to 107%.
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