Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2903153
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Funding
- National Research Foundation of Korea [R16-2004-004-01001-0, 과C6A2006] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report enhanced light output of GaN-based light-emitting diodes (LEDs) with vertically aligned ZnO nanorod arrays. The ZnO nanorod arrays were prepared on the top layer of GaN LEDs using catalyst-free metalorganic vapor phase epitaxy. Compared to conventional GaN LEDs, light output of GaN LEDs with the ZnO nanorod arrays increased up to 50% and 100% at applied currents of 20 and 50 mA, respectively. The source of the enhanced light output is also discussed. (C) 2008 American Institute of Physics.
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