Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3023059
Keywords
annealing; atomic layer deposition; cerium; current density; doping; hafnium compounds; high-k dielectric thin films; leakage currents; permittivity
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Funding
- Engineering and Physical Sciences Research Council (EPSRC) [EP/D068606/1, EP/E003370/1]
- SAFC Hitech
- Engineering and Physical Sciences Research Council [EP/D068606/1, EP/E003370/1] Funding Source: researchfish
- EPSRC [EP/D068606/1, EP/E003370/1] Funding Source: UKRI
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The effect of cerium doping on the dielectric properties of hafnium dioxide is reported. Thin films of cerium-doped hafnium oxide Ce-x-Hf1-xO2 (x=0.10,0.17,0.34) have been grown by liquid injection atomic layer deposition. After annealing at 900 degrees C, all films were transformed from an amorphous state into a stabilized cubic or tetragonal phase. As-deposited films of Ce-0.1-Hf0.9O2 showed low hysteresis voltages and negligible flat band voltage shifts. After annealing to form the crystalline cubic or tetragonal phase, the relative permittivity (kappa) increased from 25 to 32 at 100 kHz with leakage current densities at +/- 1 MV cm(-1) of similar to 1.58x10(-5) A cm(-2).
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