Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2937111
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We report the fabrication of high performance nanowire transistors (NWTs) using In2O3 nanowires as the active channel and a self-assembled nanodielectric (SAND) as the gate insulator. The SAND-based single In2O3 NWTs are controlled by individually addressed gate electrodes. These devices exhibit n-type transistor characteristics with an on-current of similar to 25 mu A for a single In2O3 nanowire at 2.0V(ds), 2.1V(gs), a subthreshold slope of 0.2 V/decade, an on-off current ratio of 10(6), and a field-effect mobility of similar to 1450 cm(2)/V s. These results demonstrate that SAND-based In2O3 NWTs are promising candidates for high performance nanoscale logic technologies. (C) 2008 American Institute of Physics.
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