Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3006316
Keywords
carrier density; dark conductivity; fullerene devices; fullerenes; interface phenomena; polymers; solar cells
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Funding
- DTI [EPSRC-GB EP/F056710/1]
- BP Solar [P3HT]
- Merck Chemicals
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We demonstrate the use of a simple charge extraction measurement to determine the charge carrier densities n in annealed poly(3-hexylthiophene):methanofullerene solar cells under operating conditions. By applying charge extraction to the device under forward bias in the dark (J(dark)), we find J(dark)proportional to n(2.6). This dependence on charge density is the same as that we find for bimolecular recombination losses observed in such devices under irradiation at open circuit, suggesting that the dark current originates from bimolecular recombination at the polymer/fullerene interface.
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