4.6 Article

Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors

Related references

Note: Only part of the references are listed.
Article Engineering, Electrical & Electronic

Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study

Yijian Ouyang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)

Article Physics, Applied

Effect of edge roughness in graphene nanoribbon transistors

Youngki Yoon et al.

APPLIED PHYSICS LETTERS (2007)

Article Engineering, Electrical & Electronic

Simulation of graphene nanoribbon field-effect transistors

Gianluca Fiori et al.

IEEE ELECTRON DEVICE LETTERS (2007)

Article Physics, Multidisciplinary

Energy band-gap engineering of graphene nanoribbons

Melinda Y. Han et al.

PHYSICAL REVIEW LETTERS (2007)

Article Engineering, Electrical & Electronic

Performance projections for ballistic graphene nanoribbon field-effect transistors

Gengchiau Liang et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)

Article Engineering, Electrical & Electronic

A graphene field-effect device

Max C. Lemme et al.

IEEE ELECTRON DEVICE LETTERS (2007)

Article Physics, Multidisciplinary

Energy gaps in graphene nanoribbons

Young-Woo Son et al.

PHYSICAL REVIEW LETTERS (2006)

Article Multidisciplinary Sciences

Electronic confinement and coherence in patterned epitaxial graphene

Claire Berger et al.

SCIENCE (2006)