Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2992202
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- Ministry of Education, Culture, Sports, Science, and Technology [16106006, 18063010]
- Grants-in-Aid for Scientific Research [16106006, 18063010] Funding Source: KAKEN
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Detection of individual dopants in the thin silicon layer using Kelvin Probe Force Microscopy is presented. The analysis of the surface potential images taken at low temperatures (13 K) on n-type and p-type samples reveals local potential fluctuations that can be attributed to single phosphorus and boron atoms, respectively. Results are confirmed by simulation of surface potential induced by dopants and by the back gate voltage dependence of the measured potential. (C) 2008 American Institute of Physics.
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