Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 dielectric

InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor (MOS) field-effect transistors due to its very high electron mobility and saturation velocity. We investigated the processing conditions and the interface properties of an InAs metal-oxide-semiconductor structure with Al(2)O(3) dielectric deposited by atomic-layer deposition. The MOS capacitor I-V and C-V characteristics were studied and discussed. Simple field-effect transistors fabricated on an InAs bulk material without source/drain implantation were measured and analyzed.